Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICS

意法半导体

OMNIFET II全自动保护功率MOSFET

The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics™ VIPower™ M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications.\n\n Built-in thermal shu • AEC-Q100 qualified \n• ECOPACK: lead free and RoHS compliant \n• Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp• Low current drawn from input pin \n• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the Powe;

ST

意法半导体

OMNIFET II fully autoprotected Power MOSFET

ST

意法半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICS

意法半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT） 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICS

意法半导体