| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VI30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified 文件：168.11 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
VI30120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件：141.58 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
VI30120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：158.28 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
VI30120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：132.53 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
VI30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.54 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB 文件：157.09 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified 文件：168.11 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified 文件：168.11 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.22 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.22 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号：
VI30120C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
18+ |
TO-262 |
41200 |
原装正品,现货特价 |
询价 | ||
VISHAY/威世 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY/威世 |
24+ |
NA/ |
3750 |
原厂直销,现货供应,账期支持! |
询价 | ||
VISHAY/威世 |
24+ |
TO-262 |
60000 |
全新原装现货 |
询价 | ||
VISHAY |
17+ |
TO-262 |
6200 |
询价 | |||
VISHAY原装 |
25+23+ |
TO-262 |
22329 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY |
20+ |
TO-262 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
VISHAY原装 |
24+ |
TO-262 |
30980 |
原装现货/放心购买 |
询价 | ||
VISHAY |
25+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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