| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VI30120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
VI30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
VI30120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
VI30120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
VI30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
Trench MOS Schottky technology DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263AB | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号：
VI30120C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-262 |
501613 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
VISHAY |
23+ |
TO-262 |
8600 |
全新原装现货 |
询价 | ||
VISHAY |
1822+ |
TO-262 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
VISHAY |
18+ |
TO-262 |
41200 |
原装正品,现货特价 |
询价 | ||
VISHAY/威世 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY/威世 |
24+ |
NA/ |
3750 |
原厂直销,现货供应,账期支持! |
询价 | ||
VISHAY/威世 |
24+ |
TO-262 |
60000 |
全新原装现货 |
询价 | ||
VISHAY |
17+ |
TO-262 |
6200 |
询价 | |||
VISHAY原装 |
25+23+ |
TO-262 |
22329 |
绝对原装正品全新进口深圳现货 |
询价 |
相关规格书
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- XC6124A246MG-G
- XC6124A250MG-G
- XC6124A333ER-G
- XC6124A334MR-G
- XC6501A1517R-G
- XC6501A1817R-G
- XC6501A2517R-G
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- XQ6SLX75-2CSG484I
- XQ6SLX75T-2CSG484I
- WM8781GEDS/R
