Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A

文件：158 Kbytes 页数：5 Pages

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：160.89 Kbytes 页数：5 Pages

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Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：157.99 Kbytes 页数：5 Pages

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Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：155.56 Kbytes 页数：5 Pages

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A

文件：158 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：160.89 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A

文件：158 Kbytes 页数：5 Pages

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Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.526 V at IF = 5A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

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肖特基二极管与整流器 30 Amp 200 Volt

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