首页 >VI30120C-E3>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VI30120C-E3 | Trench MOS Schottky technology DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263AB | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 120V TO262 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
TrenchMOSSchottkytechnology DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263AB | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
TrenchMOSSchottkytechnology DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263AB | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
TrenchMOSSchottkytechnology DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263AB | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号：
VI30120C-E3
- 功能描述：
肖特基二极管与整流器 30 Amp 120 Volt Dual TrenchMOS
- RoHS：
否
- 制造商：
Skyworks Solutions, Inc.
- 产品：
Schottky Diodes
- 峰值反向电压：
2 V
- 正向连续电流：
50 mA
- 配置：
Crossover Quad
- 正向电压下降：
370 mV
- 最大功率耗散：
75 mW
- 工作温度范围：
- 65 C to + 150 C
- 安装风格：
SMD/SMT
- 封装/箱体：
SOT-143
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
17+ |
TO-262 |
6200 |
询价 | |||
VISHAY |
1735+ |
TO262AA |
6528 |
科恒伟业!只做原装正品!假一赔十! |
询价 | ||
VISHAY原装 |
25+23+ |
TO-262 |
22329 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY |
20+ |
TO-262 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
VISHAY |
24+ |
TO-262 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VISHAY原装 |
24+ |
TO-262 |
30980 |
原装现货/放心购买 |
询价 | ||
VISHAY |
1809+ |
TO-262 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY |
1443+ |
TO-220 |
1250 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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