2-Wire Solid State Switch

文件：616.79 Kbytes 页数：5 Pages

HONEYWELL

霍尼韦尔

两线制 MR 环形磁微距传感器集成电路。扁平 TO-92 样式封装。增强灵敏度，典型值为 ±7 G。数字拉电流输出

VF401 是一款高性能的数字式双线 MR（磁阻）传感器，采用小型扁平式的 TO-92 塑料封装，带有电流输出端口，专为细间距环形磁铁的感测而设计。\n 独特的 VF401 桥布局（专利号 6297628 ）经过优化，允许目标和传感器之间存在较大气隙，减小传感器信号或精度的损失。\n VF401 对跑偏（传感器位置相对于环形磁铁内径或外径的漂移）的灵敏度降低。而且它对倾斜误差（与信号元件和环形磁铁平行位置的偏差）的敏感度也降低，允许误差高达 10°。而典型的环形磁铁传感器仅为 2°至 3°，并且受扭转（电桥槽相对于磁极转换与理想角度位置的偏差）的影响更小。 ·Robust design operating from -40 °C to 150 °C [-40 °F to 302 °F] can withstand short durations up to 175 °C [347 °F], allowing use in potential applications with extreme temperature requirements.\n·Not damaged by reverse polarity voltages when customer-supplied sense resistor is installed, enhancin;

Honeywell

霍尼韦尔

Package：径向；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 功能：专用型 类别：传感器，变送器 磁性传感器 - 开关（固态） 描述：MAGNETIC SWITCH SPEC PURP RADIAL

Honeywell Sensing and Productivity Solutions

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICA

文件：135.36 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICA

文件：135.36 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：1.12964 Mbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP

文件：130.15 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP

文件：130.15 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：217.27 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Powerpack MOS Schottky Barrier Rectifier

Features · Trench Mos Schottky Barrier · Guardring for overvoltage Protection · Low Forward Voltage Drop · Low Reverse Leakage Current · High Surge Current Capability · Plastic Material has UL Flammability Classification 94V-O

文件：538.18 Kbytes 页数：2 Pages

DAESAN