Diffused Silicon Junction

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

Ultra Low VF= 0.455 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive

文件：167.4 Kbytes 页数：5 Pages

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Trench MOS Schottky technology

Ultra Low VF = 0.455 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath t

文件：178.93 Kbytes 页数：6 Pages

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Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：214.65 Kbytes 页数：6 Pages

VishayVishay Siliconix

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

Ultra Low VF= 0.455 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive

文件：167.4 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

Ultra Low VF= 0.455 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive

文件：167.4 Kbytes 页数：5 Pages

VishayVishay Siliconix

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High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te

文件：168.56 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：213.12 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te

文件：168.56 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te

文件：168.56 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世