首页 >VF30>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

VF30

Diffused Silicon Junction

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

VF30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半导体

VF30100C-E3

Trench MOS Schottky technology

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbatht

VishayVishay Siliconix

威世科技威世科技半导体

VF30100C-E3

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Lowthermalresistance •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106

VishayVishay Siliconix

威世科技威世科技半导体

VF30100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半导体

VF30100C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半导体

VF30100S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

UltraLowVF=0.39VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

VF30100S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106

VishayVishay Siliconix

威世科技威世科技半导体

VF30100S-E3/45

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

UltraLowVF=0.39VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

VF30100S-E3SLASH45

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

UltraLowVF=0.39VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    VF30

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

供应商型号品牌批号封装库存备注价格
Vishay/GeneralSemiconduc
24+
ITO-220AB
661
询价
VISHAY
2020+
TO220
110
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
VISHAY
17+
TO220F-3
6200
询价
VISHAY
23+
TO-220
8600
全新原装现货
询价
VISHAY
24+
TO-220F
5000
只做原装公司现货
询价
FCI
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
Vishay
24+
NA
3000
进口原装正品优势供应
询价
VISHAY
23+
TO220
8560
受权代理!全新原装现货特价热卖!
询价
VISHAY
25+23+
TO-220F
15496
绝对原装正品全新进口深圳现货
询价
VISHAY
18+
TO-220F
85600
保证进口原装可开17%增值税发票
询价
更多VF30供应商 更新时间2025-7-23 16:01:00