N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The VB3222A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Features VDS (V) = 20V ID = 6.0A (VGS

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MOSFET

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Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

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Dual N-Channel 20-V (D-S) MOSFET

文件：561.12 Kbytes 页数：7 Pages

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Dual N-Channel 20 V (D-S) MOSFET

文件：713.94 Kbytes 页数：8 Pages

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