Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：105.26 Kbytes 页数：4 Pages

VishayVishay Siliconix

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Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：105.26 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Trench MOS Schottky technology

文件：93.41 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Trench MOS Schottky technology

文件：93.41 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：105.26 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

These rectifiers offer high voltage ranges in minimum-sized

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.455 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation;

Vishay

威世

包装：散装 类别：测试与计量 设备 - 专用 描述：VIBRATION DATALOGGER

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