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VB10

These rectifiers offer high voltage ranges in minimum-sized

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

VB10150C

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半导体

VB10150C-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半导体

VB10150C-E3/8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半导体

VB10150C-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半导体

VB10150C-E3SLASH8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半导体

VB10150C-M3

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VishayVishay Siliconix

威世科技威世科技半导体

VB10150C-M3_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VishayVishay Siliconix

威世科技威世科技半导体

VB10150S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo

VishayVishay Siliconix

威世科技威世科技半导体

VB10150S-E3

High efficiency operation

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Compo

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    VB10

  • 制造商:

    Leviton Manufacturing Co

供应商型号品牌批号封装库存备注价格
INFINEON
24+
SOP-14
64
询价
VISHAY
2020+
TO-263
30
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
VISHAY
23+
TO-263
8600
全新原装现货
询价
TURCK
2
全新原装 货期两周
询价
vishay原装
25+23+
TO-263
22692
绝对原装正品全新进口深圳现货
询价
VISHAY/威世
1926+
TO-263
6852
只做原装正品现货!或订货假一赔十!
询价
VISHAY
24+
TO-263
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
VISHAY/威世
2022+
241
全新原装 货期两周
询价
vishay原装
24+
TO-263
30980
原装现货/放心购买
询价
VISHAY/威世
22+
TO-263
20000
保证原装正品,假一陪十
询价
更多VB10供应商 更新时间2025-5-22 16:01:00