VB10

These rectifiers offer high voltage ranges in minimum-sized

VB10150C

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VB10150C-E3

Schotty Barrier Diode

FEATURES ·LowForwardVoltageDrop,LowPowerlosses ·HighEfficiencyOperation ·SMD APPLICATIONS ·SwitchingPowerSupply(SPS) ·HighFrequencyConverter ·DC/DCConverter

VB10150C-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VB10150C-E3/8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VB10150C-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VB10150C-E3SLASH8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VB10150C-M3

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VB10150C-M3

Schotty Barrier Diode

FEATURES ·LowForwardVoltageDrop,LowPowerlosses ·HighEfficiencyOperation ·SMD APPLICATIONS ·SwitchingPowerSupply(SPS) ·HighFrequencyConverter ·DC/DCConverter

VB10150C-M3

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A; Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

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