High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.31 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

文件：168.07 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.31 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.31 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技