High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件：104.52 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：103.88 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件：104.52 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件：86.66 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Ideal for automated placement

文件：96.92 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Ideal for automated placement

文件：96.92 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件：86.66 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 4 A

分立 ·Very low profile - typical height of 1.1 mm\n·Ideal for automated placement\n·Trench MOS Schottky technology;

Vishay

威世

Package：TO-277，3-PowerDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 80V 8A TO277A

Vishay General Semiconductor - Diodes Division

Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 80V 4A TO277A

Vishay General Semiconductor - Diodes Division