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V8P6

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件:95.41 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

V8P6

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:94.77 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

V8P6

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 4 A

Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nTrench MOS Schottky technology;

Vishay

威世科技

V8P6_V01

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件:95.41 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

V8P6HM3_ASLASHH

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 4 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件:94.77 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

V8P6HM3_ASLASHI

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 4 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件:94.77 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

V8P6-M3SLASH86A

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 4 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件:94.77 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

V8P6-M3SLASH87A

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 4 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件:94.77 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

V8P6HM3

Trench MOS Schottky technology

文件:103.36 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

V8P6HM3_A/H

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:94.77 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

供应商型号品牌批号封装库存备注价格
VISHAY
19+
TO-277
200000
询价
VISHAY/威世
24+
TO-277
98000
原装现货假一罚十
询价
VISHAY
25+
TO-277
6675
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY/威世
23+
TO-277
50000
全新原装正品现货,支持订货
询价
VISHAY
24+
TO-277
1500
原装现货假一赔十
询价
VISHAY/威世
23+
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY/威世
2019+PB
TO-277
1500
特价大量供应
询价
VISHAY/威世
2023+
SMD
8635
一级代理优势现货,全新正品直营店
询价
VISHAY/威世
新年份
TO-277
1500
原装正品大量现货,要多可发货,实单带接受价来谈!
询价
Vishay(威世)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
更多V8P6供应商 更新时间2025-10-6 8:34:00