| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
V30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
V30120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
V30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
V30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
V30120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Trench MOS Schottky technology DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263AB | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号：
V30120C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
VISHAY |
23+ |
TO-220 |
8600 |
全新原装现货 |
询价 | ||
VISHAY |
1822+ |
TO-220 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
VISHAY |
18+ |
TO-220 |
41200 |
原装正品,现货特价 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
Vishay(威世) |
22+ |
NA |
6500 |
原厂原装现货 |
询价 | ||
Vishay(威世) |
23+ |
N/A |
11800 |
询价 | |||
VISHAY |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 |
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