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V30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

文件:168.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V30120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件:141.58 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.54 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.22 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V30120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:158.28 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V30120C_V01

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件:141.58 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V30120C-E3

Trench MOS Schottky technology

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB

文件:157.09 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

V30120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

文件:168.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V30120C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

文件:168.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V30120CI-M3SLASHP

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件:135.7 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

详细参数

  • 型号:

    V30120C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
VISHAY
18+
TO-220
41200
原装正品,现货特价
询价
VISHAY/威世
23+
TO-220
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
2022+
TO-220
12888
原厂代理 终端免费提供样品
询价
Vishay(威世)
23+
N/A
11800
询价
VISHAY
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
询价
VISHAY/威世
24+
NA/
3293
原装现货,当天可交货,原型号开票
询价
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
询价
VISHAY
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY/威世
24+
TO-220
60000
全新原装现货
询价
更多V30120C供应商 更新时间2025-10-12 13:00:00