Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：141.58 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：127.38 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

120 V power Schottky rectifier

Features • High junction temperature capability • Avalanche rated • Low leakage current • Good trade-off between leakage current and forward voltage drop • ECOPACK®2 compliant

文件：211.7 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

SOP-8

EM

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