| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
V20W | PIEZOELECTRIC ENERGY HARVESTERS 文件：3.1748 Mbytes 页数：24 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A 文件：91.41 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.co 文件：89.84 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.co 文件：89.84 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.co 文件：90.69 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.co 文件：90.69 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：122.54 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：123.62 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：115.78 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：122.54 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
17+ |
TO252 |
6200 |
100%原装正品现货 |
询价 | ||
VISHAY |
25+23+ |
TO-252(DP |
22900 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY/威世 |
2447 |
TO252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY |
25+ |
TO-252 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
AVXKYOCERA |
24+ |
0805 |
33200 |
原装正品价格优势!欢迎询价QQ:385913858TEL:15 |
询价 | ||
VISHAY |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
TO-252(DPAK) |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
TO252 (DPak) |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY/威世 |
23+ |
TO-252(DPAK) |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY |
1504+ |
TO-252 |
2944 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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