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V20120S

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技

Vishay

V20120S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,per   JESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandin   accordancetoWEEE2002/96/EC •Haloge

VishayVishay Siliconix

威世科技

Vishay

V20120S

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120S

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120S_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技

Vishay

V20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD2

VishayVishay Siliconix

威世科技

Vishay

V20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技

Vishay

V20120S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,per   JESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandin   accordancetoWEEE2002/96/EC •Haloge

VishayVishay Siliconix

威世科技

Vishay

V20120S-E3_V01

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技

Vishay

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B

VishayVishay Siliconix

威世科技

Vishay

V20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技

Vishay

V20120SG_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技

Vishay

V20120SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B

VishayVishay Siliconix

威世科技

Vishay

V20120SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B

VishayVishay Siliconix

威世科技

Vishay

V20120S_11

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120S_12

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120S_15

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

V20120S-E3_15

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

Vishay

详细参数

  • 型号:

    V20120S

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    High-Voltage Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY
1305+
TO-220
12000
公司特价原装现货
询价
VISHAY
23+
TO-220
8600
全新原装现货
询价
VISHAY
2016+
TO220
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
VISHAY
2017+
TO-220
54785
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
VISHAY
2020+
TO-220
700
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
VISHAY
2021+
TO-220
6660
百分百原装正品
询价
VISHAY
1735+
TO220
6528
科恒伟业!只做原装正品!假一赔十!
询价
VISHAY
23+
TO220
8560
受权代理!全新原装现货特价热卖!
询价
VISHAY原装
22+23+
TO-220
23547
绝对原装正品全新进口深圳现货
询价
VISHAY原装
19+
TO-220
9860
一级代理
询价
更多V20120S供应商 更新时间2024-4-19 18:05:00