High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per    JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in    accordance to WEEE 2002/96/EC • Haloge

文件：166.29 Kbytes 页数：5 Pages

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High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：141.04 Kbytes 页数：5 Pages

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High-Voltage Trench MOS Barrier Schottky Rectifier

文件：162.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：129.93 Kbytes 页数：5 Pages

VishayVishay Siliconix

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High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：141.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件：217.34 Kbytes 页数：6 Pages

VishayVishay Siliconix

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High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 2

文件：161.02 Kbytes 页数：6 Pages

VishayVishay Siliconix

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High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per    JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in    accordance to WEEE 2002/96/EC • Haloge

文件：166.29 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件：217.34 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per    JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in    accordance to WEEE 2002/96/EC • Haloge

文件：166.29 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世