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V20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 2

文件:161.02 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

V20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件:217.34 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

V20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

文件:150.35 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

V20120S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per    JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in    accordance to WEEE 2002/96/EC • Haloge

文件:166.29 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V20120S-E3_V01

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件:217.34 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

V20120S-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per    JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in    accordance to WEEE 2002/96/EC • Haloge

文件:166.29 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V20120S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.33 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V20120S-E3_15

High Voltage Trench MOS Barrier Schottky Rectifier

文件:150.35 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

V20120S-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.33 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

详细参数

  • 型号:

    V20120S-E3

  • 功能描述:

    肖特基二极管与整流器 20 Amp 120 Volt Single TrenchMOS

  • RoHS:

  • 制造商:

    Skyworks Solutions, Inc.

  • 产品:

    Schottky Diodes

  • 峰值反向电压:

    2 V

  • 正向连续电流:

    50 mA

  • 配置:

    Crossover Quad

  • 正向电压下降:

    370 mV

  • 最大功率耗散:

    75 mW

  • 工作温度范围:

    - 65 C to + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOT-143

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
VISHAY/威世
23+
TO220
50000
全新原装正品现货,支持订货
询价
VIS
22+
TO-220AB
6000
十年配单,只做原装
询价
VISHAY/威世
23+
TO-220AB
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY/威世
24+
NA/
3455
原厂直销,现货供应,账期支持!
询价
VISHAY
23+24
TO-220
17711
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
询价
VIS
25+
TO-TO-220AB
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY/威世
24+
TO220
60000
全新原装现货
询价
VISHAY/威世
24+
TO220
23000
只做正品原装现货
询价
VISHAY
2016+
TO-220
3900
只做原装,假一罚十,公司可开17%增值税发票!
询价
VISHAY
25+
TO220
150
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多V20120S-E3供应商 更新时间2025-10-11 11:00:00