High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：141.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：126.97 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

N/A

TE泰科

上传：深圳市阅创想科技有限公司

DIP-10

TYCO

泰科

上传：深圳市赛尔通科技有限公司

DIP8

TE

上传：深圳市汇创佳电子科技有限公司