High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definition

文件：137.1 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

文件：136.46 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definition

文件：137.1 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Package：8-PowerTDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：RECTIFIER BARRIER SCHOTTKY FP5X6

Vishay General Semiconductor - Diodes Division

Package：8-PowerTDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：RECTIFIER BARRIER SCHOTTKY FP5X6

Vishay General Semiconductor - Diodes Division

Package：8-PowerTDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：RECTIFIER BARRIER SCHOTTKY FP5X6

Vishay General Semiconductor - Diodes Division