丝印：V1；Package：SOD-523；ZENER DIODE

Features Constant Voltage Control Wide Voltage Range Selection 2.4V To 75V

文件：258.98 Kbytes 页数：3 Pages

DAESAN

丝印：V1；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES • Dual silicon planar Zener diodes, common cathode • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 . Replace “C” with “B” for 2 tolerance • The parameters are valid for both diodes in one case.VZ and Rzj of the two

文件：119.89 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

丝印：V1；Package：6LdμTDFN；250mA Single LDO with Low IQ, Low Noise and High PSRR LDO

The ISL9021A is a single LDO, which provides high performance, low input voltage and high PSRR. It delivers guaranteed continuous 250mA load current and is stable with 1µF to 4.7µF of output capacitance (±30) with an ESR range of 5mΩ to 400m. The input voltage range for the ISL9021A is between 1.

文件：574.94 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：V1；Package：6LdμTDFN；250mA Single LDO with Low IQ, Low Noise and High PSRR LDO

The ISL9021A is a single LDO, which provides high performance, low input voltage and high PSRR. It delivers guaranteed continuous 250mA load current and is stable with 1µF to 4.7µF of output capacitance (±30) with an ESR range of 5mΩ to 400m. The input voltage range for the ISL9021A is between 1.

文件：574.94 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：V1；Package：SOT23-5L；300mA Ultra-Low Quiescent Current LDO

GENERAL DESCRIPTION The MA3001 is an Ultra-Low quiescent current, high accuracy, low noise, high PSRR, low dropout voltage regulator. It also includes fast discharge function, EN pin enable control. The current limit fold-back circuit operates as a short circuit protection function and can lim

文件：122.49 Kbytes 页数：2 Pages

MPOWERMajor-Power Technology Co., LTD.

久昌科技久昌科技股份有限公司

丝印：V1；Package：SOT23-5L；300mA Ultra-Low Quiescent Current LDO

GENERAL DESCRIPTION The MA3001 is an Ultra-Low quiescent current, high accuracy, low noise, high PSRR, low dropout voltage regulator. It also includes fast discharge function, EN pin enable control. The current limit fold-back circuit operates as a short circuit protection function and can lim

文件：122.49 Kbytes 页数：2 Pages

MPOWERMajor-Power Technology Co., LTD.

久昌科技久昌科技股份有限公司

丝印：V1；Package：SOT23-5L；300mA Ultra-Low Quiescent Current LDO

GENERAL DESCRIPTION The MA3001 is an Ultra-Low quiescent current, high accuracy, low noise, high PSRR, low dropout voltage regulator. It also includes fast discharge function, EN pin enable control. The current limit fold-back circuit operates as a short circuit protection function and can lim

文件：122.49 Kbytes 页数：2 Pages

MPOWERMajor-Power Technology Co., LTD.

久昌科技久昌科技股份有限公司

丝印：V1；SILICON POWER MOS FET

N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology

文件：285.43 Kbytes 页数：8 Pages

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丝印：V1；SILICON POWER MOS FET

N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology

文件：285.43 Kbytes 页数：8 Pages

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瑞萨

丝印：V1；SILICON POWER MOS FET

N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology

文件：285.43 Kbytes 页数：8 Pages

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瑞萨