丝印：V1；SILICON POWER MOS FET

N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology

文件：285.43 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：V1；Package：SOT353；Very low capacitance unidirectional quadruple ESD protection diode arrays

1.1 General description Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features 1.3 A

文件：682.78 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：V1；Package：SOD323；1 A very low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: 1

文件：198.52 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：V1；Package：SOD323；1 A very low VF MEGA Schottky barrier rectifier

FEATURES • Forward current: 1 A • Reverse voltages: 20 V, 30 V, 40 V • Very low forward voltage • Ultra small and very small plastic SMD package • Power dissipation comparable to SOT23. APPLICATIONS • High efficiency DC-to-DC conversion • Voltage clamping • Protection circuits • Low volt

文件：164.64 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：V1；μClamp® 1-Line ESD & Surge Protection

Features • High ESD withstand Voltage: ±30kV (Contact & AIr) per IEC 61000-4-2 • High peak pulse current capability: 18A (tp = 8/20μs) • Ultra-small package(1.0 x 0.6 x 0.25mm) • Protects one I/O or power line • Low ESD clamping voltage • Working voltage: ± 15V • Solid-state silicon-avalan

文件：466.5 Kbytes 页数：7 Pages

SEMTECH

先之科

丝印：V1；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC

文件：280.98 Kbytes 页数：10 Pages

ROHM

罗姆

丝印：V1；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC

文件：482.77 Kbytes 页数：16 Pages

ROHM

罗姆

丝印：V1；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC

文件：570.86 Kbytes 页数：16 Pages

ROHM

罗姆

丝印：V1；Package：SOD-523；Zener Diode

文件：1.82868 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：V1；Package：SOT-323；N-Channel MOSFET uses advanced trench technology

文件：1.28294 Mbytes 页数：4 Pages

DOINGTER

杜因特