NE5500134中文资料瑞萨数据手册PDF规格书

N-CHANNEL SILICON POWER MOS FET

POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS

DESCRIPTION

The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate

lateral MOS FET), housed in a surface mount 3-pin power minimold (34 PKG) (SOT-89 type) package. The device

can deliver 29.5 dBm output power with 55 power added efficiency at 1.9 GHz under the 4.8 V supply voltage.

FEATURES

• High output power : Pout = 29.5 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)

• High power added efficiency : ηadd = 55 TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)

• High linear gain : GL = 13 dB TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 10 dBm)

• Surface mount package : 3-pin power minimold (34 PKG) (SOT-89 type)

• Single supply : VDS = 3.0 to 6.0 V