P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

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20V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 40 mΩ @ VGS =2.5 V,

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20V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 40 mΩ @ VGS =2.5 V,

文件：161.51 Kbytes 页数：3 Pages

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20V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 40 mΩ @ VGS =2.5 V,

文件：161.51 Kbytes 页数：3 Pages

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N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2316L is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

文件：140.49 Kbytes 页数：4 Pages

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N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2316L is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

文件：140.49 Kbytes 页数：4 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：492.1 Kbytes 页数：9 Pages

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微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：492.1 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2316L is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

文件：140.49 Kbytes 页数：4 Pages

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P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 55mΩ @ VGS=-4.5V, ID=-2.4A * RDS(ON) ≤ 80mΩ @ VGS=-2.5V, ID=-

文件：230.29 Kbytes 页数：4 Pages

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