2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage

文件：165.13 Kbytes 页数：4 Pages

UTC

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P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：472.35 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such

文件：178.61 Kbytes 页数：5 Pages

UTC

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N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such

文件：178.61 Kbytes 页数：5 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such

文件：178.61 Kbytes 页数：5 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

■ DESCRIPTION The UT2304 is an N-Channel Power MOSFET that can achieve the lowest possible on-resistance, extremely and cost-effectiveness device by using advanced trench technology.

文件：229.24 Kbytes 页数：5 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

■ DESCRIPTION The UT2304 is an N-Channel Power MOSFET that can achieve the lowest possible on-resistance, extremely and cost-effectiveness device by using advanced trench technology.

文件：229.24 Kbytes 页数：5 Pages

UTC

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：492.37 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE

■ DESCRIPTION The UT2304 is an N-Channel Power MOSFET that can achieve the lowest possible on-resistance, extremely and cost-effectiveness device by using advanced trench technology.

文件：229.24 Kbytes 页数：5 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

■ DESCRIPTION The UT2304 is an N-Channel Power MOSFET that can achieve the lowest possible on-resistance, extremely and cost-effectiveness device by using advanced trench technology.

文件：229.24 Kbytes 页数：5 Pages

UTC

友顺