P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 55mΩ @ VGS=-4.5V, ID=-2.4A * RDS(ON) ≤ 80mΩ @ VGS=-2.5V, ID=-

文件：230.29 Kbytes 页数：4 Pages

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Trench Power MOSFET  (P-CH)

The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON)< 55m Ω @VGS=-4.5V \n• Low capacitance \n• Fast switching capability \n• Avalanche energy specified;

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P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 55mΩ @ VGS=-4.5V, ID=-2.4A * RDS(ON) ≤ 80mΩ @ VGS=-2.5V, ID=-

文件：230.29 Kbytes 页数：4 Pages

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友顺

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 55mΩ @ VGS=-4.5V, ID=-2.4A * RDS(ON) ≤ 80mΩ @ VGS=-2.5V, ID=-

文件：230.29 Kbytes 页数：4 Pages

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P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：491.7 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：251.61 Kbytes 页数：4 Pages

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P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：251.61 Kbytes 页数：4 Pages

UTC

友顺