UPD444012AGY-B10X-MJH规格书供应价格瑞萨-114ic电子网

首页 >UPD444012AG>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
UPD444012AGY-B10X-MJH	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-B10X-MJH-A	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-B55X-MJH	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-B55X-MJH-A	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-B70X-MJH	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-B70X-MJH-A	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-B85X-MJH	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-B85X-MJH-A	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-C10X-MJH	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-C10X-MJH-A	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-C12X-MJH	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-C12X-MJH-A	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-C70X-MJH	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-C70X-MJH-A	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-C85X-MJH	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-C85X-MJH-A	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •262,144wordsby16bitsorganization •Fastaccesstime:50,55,70,85,100,120ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (Bversion:VCC=2.7to3.6V,Cversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD444012AGY-B10X-MJH	文件：143.8 Kbytes Page：24 Pages	4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPD444012AGY-B55X-MJH	文件：143.8 Kbytes Page：24 Pages	4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPD444012AGY-B70X-MJH	文件：143.8 Kbytes Page：24 Pages	4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPD444012AGY-B85X-MJH	文件：143.8 Kbytes Page：24 Pages	4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

12 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
万三科技(深圳)有限公司	UPD444012AGY-B10X-MJH	RENESAS	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价
深圳市东来宝电子科技有限公司	UPD444012AGY-B55X	NEC	22+	TSOP-48	6850	郑重承诺只做原装进口货	询价
深圳市卓越微芯电子有限公司	UPD444012AGY-B55X-MJ	NEC	2020+	TSOP	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市壹芯创科技有限公司	UPD444012AGY-B55X-MJ	NEC	22+	TSOP	5000	全新原装现货!价格优惠!可长期	询价
深圳市英科美电子有限公司	UPD444012AGY-B55X-MJH	NEC	2021+	TSOP48	6038	百分百原装正品	询价
深圳市科恒伟业电子有限公司	UPD444012AGY-B55X-MJH	NEC	1948+	SOP-48	6852	只做原装正品现货!或订货假一赔十!	询价
中天科工半导体（深圳）有限公司	UPD444012AGY-B55X-MJH	NEC	20+	TSOP48	67500	原装优势主营型号-可开原型号增税票	询价
深圳市纳艾斯科技有限公司	UPD444012AGY-B55X-MJH	NEC	2020+	SOP-48	8000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市维尔达电子有限公司	UPD444012AGY-B55X-MJH	收购此料	2023+	TSOP44	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市澳亿芯电子科技有限公司	UPD444012AGY-B55X-MJH	NEC	10+	TSOP	2278	普通	询价

更多UPD444012AG供应商更新时间2024-9-22 15:00:00

相关规格书

相关库存