UPD444012AGY-B85X-MJH规格书应用电路原装现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPD444012AGY-B85X-MJH	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features • 262,144 words by 16 bits organization • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention: 1.0 V (MIN.) • 文件：720.42 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
UPD444012AGY-B85X-MJH	文件：143.8 Kbytes Page：24 Pages	4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 文件：143.8 Kbytes 页数：24 Pages	NEC 瑞萨	NEC
UPD444012AGY-B85X-MJH-A	文件：720.42 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features • 262,144 words by 16 bits organization • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention: 1.0 V (MIN.) • 文件：720.42 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
UPD5713TK-E2-A	文件：0 bytes Page：0 Pages	SOT563	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
UPD5716GR-E1-A	文件：0 bytes Page：0 Pages	HTSSOT16	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS

更多UPD444012AGY-B85X-MJH供应商更新时间2025-12-1 16:06:00