MOS INTEGRATED CIRCUIT

Features • 131,072 words by 16 bits organization • Fast access time : 50, 55, 70, 85 ns (MAX.) • Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (BB version : VCC = 2.7 to 3.6 V, BC version : VCC = 2.2 to 3.6 V) • Low VCC data retention : 1.0 V (MIN.) • Ope

文件：757.35 Kbytes 页数：26 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features • 131,072 words by 16 bits organization • Fast access time : 50, 55, 70, 85 ns (MAX.) • Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (BB version : VCC = 2.7 to 3.6 V, BC version : VCC = 2.2 to 3.6 V) • Low VCC data retention : 1.0 V (MIN.) • Ope

文件：757.35 Kbytes 页数：26 Pages

RENESAS

瑞萨

2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

文件：148.83 Kbytes 页数：24 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

Features • 131,072 words by 16 bits organization • Fast access time : 50, 55, 70, 85 ns (MAX.) • Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (BB version : VCC = 2.7 to 3.6 V, BC version : VCC = 2.2 to 3.6 V) • Low VCC data retention : 1.0 V (MIN.) • Ope

文件：757.35 Kbytes 页数：26 Pages

RENESAS

瑞萨