UPD442012A-X规格书应用电路原装现货瑞萨-114ic电子网

零件型号	下载订购	功能描述	制造商上传企业	LOGO
UPD442012A-X	文件：757.35 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features •131,072wordsby16bitsorganization •Fastaccesstime:50,55,70,85ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •Ope	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD442012A-X	文件：148.83 Kbytes Page：24 Pages	2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPD442012A-BBXXX	文件：757.35 Kbytes Page：26 Pages	MOSINTEGRATEDCIRCUIT Features •131,072wordsby16bitsorganization •Fastaccesstime:50,55,70,85ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •Ope	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD442012A-BCXXX	文件：757.35 Kbytes Page：26 Pages	MOSINTEGRATEDCIRCUIT Features •131,072wordsby16bitsorganization •Fastaccesstime:50,55,70,85ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •Lowvoltageoperation (BBversion:VCC=2.7to3.6V,BCversion:VCC=2.2to3.6V) •LowVCCdataretention:1.0V(MIN.) •Ope	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

更多UPD442012A-X供应商更新时间2025-7-28 15:59:00