UPC2709T-E3

2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION TheUPC2709TandUPC2712TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,a

UPC2709T-E3

丝印：C1E；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES •Supplyvoltage:VCC=4.5to5.5V •Widebandresponse:fu=2.3GHzTYP.@3dBbandwidth •Mediumoutputpower:PO(sat)=+11.5dBm@f=1GHzwithexternalinductor •Powergain:GP=23dBTYP.@f=1GHz •Portimpedance:input/output50W

UPC2709T-E3

2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER; • WIDE FREQUENCY RESPONSE: 2.5 GHz\n• HIGH GAIN:23 dB (UPC2709T)\n• SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T)\n• INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE\n• 5 V SINGLE SUPPLY VOLTAGE\n• SUPER SMALL PACKAGE\n• TAPE AND REEL PACKAGING OPTION AVAILABLE;

DESCRIPTION\nThe UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and test/\nmeasurement equipment.FEATURES\n• WIDE FREQUENCY RESPONSE: 2.5 GHz\n• HIGH GAIN:23 dB (UPC2709T)\n• SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T)\n• INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE\n• 5 V SINGLE SUPPLY VOLTAGE\n• SUPER SMALL PACKAGE\n• TAPE AND REEL PACKAGING OPTION AVAILABLE

UPC2709T-E3-A

Package：SOT-23-6 细型，TSOT-23-6；包装：卷带（TR） 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP CELLULAR 2GHZ-2.3GHZ T06