1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga

文件：148.25 Kbytes 页数：12 Pages

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low power consumption : 15 mW (VCC = 3.4 V, ICC = 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz • Input and output matching : 50 : • Super small package : 6 pin mini mold

文件：292.72 Kbytes 页数：14 Pages

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LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER

文件：81.49 Kbytes 页数：6 Pages

NEC

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1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga

文件：148.25 Kbytes 页数：12 Pages

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT\n\nFEATURES\n• Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP.\n• High power gain : 19 dB TYP. @ f = 0.5 GHz\n• Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GH • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP.\n• High power gain : 19 dB TYP. @ f = 0.5 GHz\n• Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz\n• Input and output matching : 50 :\n• Super small package : 6 pin mini mold;

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