3 V, 2.7 GHz Si MMIC WIDEBAND AMPLIFIER

DESCRIPTION The UPC2745T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This device is suitable as a buffer amplifier for cellular and cordless telephone applications. Operating

文件：115.84 Kbytes 页数：5 Pages

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：2.10175 Mbytes 页数：17 Pages

CEL

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : Recommended VCC = 2.7 to 3.3 V Circuit operation VCC = 1.8 to 3.3 V • Upper limit operating frequency : μPC2745TB; fu = 2.7 GHz TYP.@3 dB bandwidth μPC2746TB; fu = 1.5 GHz TYP.@3 dB bandwidth • High isolation : μPC2745TB; ISL = 38 dB TYP.@f = 500 MHz μPC2746TB; IS

文件：426.21 Kbytes 页数：21 Pages

RENESAS

瑞萨

3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The UPC2745TB and UPC2746TB are Silicon MMIC Wideband Amplifiers manufactured using NECs 20 GHz fT NESATTM III silicon bipolar process. These devices are designed for use as buffer amps in mobile communication applications such as Cellular, PCS, and Cordless handsets, and WLAN transce

文件：381.93 Kbytes 页数：20 Pages

NEC

瑞萨

3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The UPC2745TB and UPC2746TB are Silicon MMIC Wideband Amplifiers manufactured using NECs 20 GHz fT NESATTM III silicon bipolar process. These devices are designed for use as buffer amps in mobile communication applications such as Cellular, PCS, and Cordless handsets, and WLAN transce

文件：381.93 Kbytes 页数：20 Pages

NEC

瑞萨

丝印：C1Q；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : Recommended VCC = 2.7 to 3.3 V Circuit operation VCC = 1.8 to 3.3 V • Upper limit operating frequency : μPC2745TB; fu = 2.7 GHz TYP.@3 dB bandwidth μPC2746TB; fu = 1.5 GHz TYP.@3 dB bandwidth • High isolation : μPC2745TB; ISL = 38 dB TYP.@f = 500 MHz μPC2746TB; IS

文件：426.21 Kbytes 页数：21 Pages

RENESAS

瑞萨

3 V, 2.7 GHz Si MMIC WIDEBAND AMPLIFIER

DESCRIPTION The UPC2745T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This device is suitable as a buffer amplifier for cellular and cordless telephone applications. Operating

文件：115.84 Kbytes 页数：5 Pages

NEC

瑞萨

3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

文件：80.43 Kbytes 页数：8 Pages

NEC

瑞萨

3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

文件：258.42 Kbytes 页数：9 Pages

CEL

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：2.10175 Mbytes 页数：17 Pages

CEL