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型号	下载订购	功能描述	制造商上传企业	LOGO
UPC2711T-E3	文件：185.93 Kbytes Page：12 Pages	2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and 文件：185.93 Kbytes 页数：12 Pages	NEC 瑞萨	NEC
UPC2711T-E3	文件：140.58 Kbytes Page：6 Pages	3 GHz SILICON MMIC WIDE-BAND AMPLIFIER DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and 文件：140.58 Kbytes 页数：6 Pages	NEC 瑞萨	NEC
UPC2712TB-E3-A	文件：0 bytes Page：0 Pages	SOT363	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
UPC2746TB-E3-A	文件：0 bytes Page：0 Pages	SOD363	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
UPC2746T-E3	文件：0 bytes Page：0 Pages	SOT363	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS

更多UPC2711T-E3供应商更新时间2025-12-10 15:10:00