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UPC2715

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga

文件:148.25 Kbytes 页数:12 Pages

NEC

瑞萨

UPC2715

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

Renesas

瑞萨

UPC2715T

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga

文件:148.25 Kbytes 页数:12 Pages

NEC

瑞萨

UPC2715T

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low power consumption : 15 mW (VCC = 3.4 V, ICC = 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz • Input and output matching : 50 : • Super small package : 6 pin mini mold

文件:292.72 Kbytes 页数:14 Pages

RENESAS

瑞萨

UPC2715T-E3

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga

文件:148.25 Kbytes 页数:12 Pages

NEC

瑞萨

UPC2715T

LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER

文件:81.49 Kbytes 页数:6 Pages

NEC

瑞萨

UPC2715T

BIPOLAR ANALOG INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT\n\nFEATURES\n• Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP.\n• High power gain : 19 dB TYP. @ f = 0.5 GHz\n• Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GH • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP.\n• High power gain : 19 dB TYP. @ f = 0.5 GHz\n• Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz\n• Input and output matching : 50 :\n• Super small package : 6 pin mini mold;

Renesas

瑞萨

详细参数

  • 型号:

    UPC2715

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

供应商型号品牌批号封装库存备注价格
NEC
24+
SOT-163SOT-23-6
12600
新进库存/原装
询价
NEC
24+
SOT-163
5000
只做原装公司现货
询价
NEC
25+23+
Sot-163
31947
绝对原装正品全新进口深圳现货
询价
NEC
23+
SOT-236
50000
全新原装正品现货,支持订货
询价
NEC
23+
SOT-236
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
NEC
24+
SOT-6
3000
全新原装现货 优势库存
询价
NEC
26+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
询价
RENESAS/瑞萨
22+
SOT-363
20000
只做原装
询价
NEC
25+
SOT-363
90000
全新原装现货
询价
NEC
2025+
SOP
3587
全新原厂原装产品、公司现货销售
询价
更多UPC2715供应商 更新时间2026-4-17 16:01:00