NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor fT = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low

文件：274.09 Kbytes 页数：8 Pages

RENESAS

瑞萨

NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor fT = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low

文件：274.09 Kbytes 页数：8 Pages

RENESAS

瑞萨

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

FEATURES * 25 Volt VCEO * 5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High Gain * Ptot=1.2 Watts

文件：71.91 Kbytes 页数：3 Pages

DIODES

美台半导体

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

FEATURES * 25 Volt VCEO * 5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High Gain * Ptot=1.2 Watts

文件：60.33 Kbytes 页数：3 Pages

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