NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., |S21e|2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Built-in 2 transistors (2 × 2SC5800) •

文件：129.61 Kbytes 页数：10 Pages

NEC

瑞萨

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., ½S21e½2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Built-in 2 transistors (2 ´ 2SC5800) •

文件：292.78 Kbytes 页数：13 Pages

RENESAS

瑞萨

NPN SILICON RF TWIN TRANSISTOR

文件：271.09 Kbytes 页数：11 Pages

CEL

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., |S21e|2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Built-in 2 transistors (2 × 2SC5800) •

文件：129.61 Kbytes 页数：10 Pages

NEC

瑞萨

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., ½S21e½2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Built-in 2 transistors (2 ´ 2SC5800) •

文件：292.78 Kbytes 页数：13 Pages

RENESAS

瑞萨

NPN SILICON RF TWIN TRANSISTOR

文件：271.09 Kbytes 页数：11 Pages

CEL

NPN SILICON RF TWIN TRANSISTOR

Renesas

瑞萨

NPN SILICON RF TWIN TRANSISTOR

CEL