SiC JFETs

United Silicon Carbide, Inc offers the xJ series of high-performanceSiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is al • Low on-resistanceRDS(on)max of 0.080Ω\n\n• Voltage controlled\n\n• Maximum operating temperature of 175°C\n\n• Extremely fast switching not dependent on temperature\n\n• Low gate charge\n\n• Low intrinsic capacitance;

Qorvo

威讯联合

丝印：UJN1208K；Package：TO-247-3L；80mW - 1200V SiC Normally-On JFET

文件：445.78 Kbytes 页数：8 Pages

UNITEDSIC

UnitedSiC.

1A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE & FIXED REGULATOR

DESCRIPTION The US1206 family of devices are ultra low dropout 1A regulators using PNP transistor as the pass element. These products are ideal when a single input supply is available only and the dropout voltage is less than 1V, exceeding the minimum dropout characteristics of NPN/PNP hybrid reg

文件：39.81 Kbytes 页数：7 Pages

UNISEM

1A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE & FIXED REGULATOR

DESCRIPTION The US1206 family of devices are ultra low dropout 1A regulators using PNP transistor as the pass element. These products are ideal when a single input supply is available only and the dropout voltage is less than 1V, exceeding the minimum dropout characteristics of NPN/PNP hybrid reg

文件：39.81 Kbytes 页数：7 Pages

UNISEM

Regulador de Voltaje de 1200VA - Regulaci처n autom찼tica de voltaje con supresi처n de sobretensiones

文件：153.28 Kbytes 页数：2 Pages

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