UJN1208K中文资料SiC JFETs数据手册Qorvo规格书

描述 Description

United Silicon Carbide, Inc offers the xJ series of high-performanceSiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

特性 Features

• Low on-resistanceRDS(on)max of 0.080Ω

• Voltage controlled

• Maximum operating temperature of 175°C

• Extremely fast switching not dependent on temperature

• Low gate charge

• Low intrinsic capacitance