UJC06505K中文资料High-Performance SiC FETs数据手册Qorvo规格书

描述 Description

United Silicon Carbide’s FET products co-package its xJ series high-performance SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

特性 Features

• Max. on-resistance RDS(on)max of 45mΩ

• Standard 12V gate drive w PV inverters

• Maximum operating temperature of 150°C

• Excellent reverse recovery

• Low gate charge

• Low intrinsic capacitance