UJ3C120150K3S数据手册Qorvo中文资料规格书

描述 Description

Qorvo's UJ3C120150K3S 1200 V, 150 mohm SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

特性 Features

• On-resistance (RDS(on)): 150 mohm (typ)
• Maximum operating temperature: 175 °C
• Excellent reverse recovery
• Low gate charge
• Low intrinsic capacitance
• ESD protected, HBM class 2

应用 Application

• EV Charging
• PV Inverters
• Switched-Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating