UJ3C065030T3S数据手册Qorvo中文资料规格书

描述 Description

Qorvo's UJ3C065030T3S is a 650 V, 27 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. Available in the TO-220-3L package, this device exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

特性 Features

• On-resistance (RDS(on)): 27 mohm (typ)
• Maximum operating temperature: 175 °C
• Excellent reverse recovery
• Low gate charge
• Low intrinsic capacitance
• ESD protected, HBM class 2

应用 Application

• EV Charging
• PV Inverters
• Switched-Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating