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UJ3C065030K3S数据手册Qorvo中文资料规格书
UJ3C065030K3S规格书详情
描述 Description
Qorvo's UJ3C065030K3S 650 V, 27 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. Available in the TO-247-3L package, this device exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
特性 Features
• On-resistance (RDS(on)): 27 mohm (typ)
• Maximum operating temperature: 175 °C
• Excellent reverse recovery
• Low gate charge
• Low intrinsic capacitance
• ESD protected, HBM class 2
应用 Application
• EV Charging
• PV Inverters
• Switched-Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating
技术参数
- 制造商编号
:UJ3C065030K3S
- 生产厂家
:Qorvo
- RDS(on) 典型值 @ 25C(mohm)
:27
- ID 最大值(A)
:85
- 代
:Gen 3
- Tj 最大值(°C)
:175
- 车规级认证
:Yes
- 封装类型
:TO-247-3L
- RoHS
:Yes
- Lead Free
:Yes
- Halogen Free
:Yes
- ITAR Restricted
:No
- ECCN
:EAR99
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
USCI |
22+ |
TO-247 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
USCI |
2022+ |
TO-247 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
USCI |
23+ |
TO-247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
USCI |
20+ |
TO-247 |
15 |
现货很近!原厂很远!只做原装 |
询价 | ||
QORVO |
24+ |
N/A |
1467 |
原装原装原装 |
询价 | ||
USCI |
2023+ |
TO-247 |
1000 |
专注全新正品,优势现货供应 |
询价 | ||
USIC |
25+ |
30000 |
原装现货,支持实单 |
询价 | |||
USCI |
2022+ |
TO-247 |
15 |
原厂代理 终端免费提供样品 |
询价 | ||
USCI |
24+ |
TO247-3 |
60000 |
询价 | |||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |