Silicon Carbide (SiC) Cascode JFET - EliteSiC, 150 mohm, 1200V, TO-247-3L

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller sy

ONSEMI

安森美半导体

1200 V, 150 mohm SiC FET

Qorvo's UJ3C120150K3S 1200 V, 150 mohm SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics o • On-resistance (RDS(on)): 150 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery\n• Low gate charge\n• Low intrinsic capacitance\n• ESD protected, HBM class 2;

Qorvo

威讯联合

丝印：UJ3C120150K3S；Package：TO-247-3L；1200V-150mW SiC FET

文件：419.05 Kbytes 页数：10 Pages

UNITEDSIC

UnitedSiC.

CUIDEVICES

上传：深圳市三芯电子有限公司

TSSOP-32

恩XP

上传：深圳庞田科技有限公司