UJ3C120070K4S数据手册Qorvo中文资料规格书

描述 Description

Qorvo's UJ3C120070K4S is a 1200 V, 70 mohm Gen 3 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true \"drop-in replacement\" to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

特性 Features

• On-resistance RDS(on): 70 mohm (typ)
• Operating temperature: 175 °C (max)
• Excellent reverse recovery: Qrr = 113 nC
• Low body diode VFSD: 1.41 V
• Low gate charge: QG = 46 nC
• Threshold voltage VG(th): 5.0 V (typ) allowing 0 to 15 V drive
• Low intrinsic capacitance
• ESD protected: HBM class 2 and CDM class C3
• TO-247-4L package for faster switching, clean gate waveforms

应用 Application

• EV Charging
• PV Inverters
• Switched-Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating