UJ3C120080K3S中文资料Silicon Carbide (SiC) Cascode JFET - EliteSiC, 80 mohm, 1200V, TO-247-3L数据手册ONSEMI规格书

描述 Description

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads