Silicon Carbide (SiC) Cascode JFET - EliteSiC, 80 mohm, 1200V, TO-247-3L

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller sy

ONSEMI

安森美半导体

1200 V, 80 mohm SiC FET

Qorvo's UJ3C120080K3S 1200 V, 80 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteri • On-resistance RDS(on): 80 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery\n• Low gate charge\n• Low intrinsic capacitance\n• ESD protected, HBM class 2;

Qorvo

威讯联合

丝印：UJ3C120080K3S；Package：TO-247-3L；1200V-80mW SiC FET

文件：585.37 Kbytes 页数：10 Pages

UNITEDSIC

UnitedSiC.

1200V-80mW SiC FET

文件：518.919 Kbytes 页数：12 Pages

UNITEDSIC

UnitedSiC.