1200 V, 80 mohm SiC FET

Qorvo's UJ3C120080K3S 1200 V, 80 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteri • On-resistance RDS(on): 80 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery\n• Low gate charge\n• Low intrinsic capacitance\n• ESD protected, HBM class 2;

Qorvo

威讯联合

丝印：UJ3C120080K3S；Package：TO-247-3L；1200V-80mW SiC FET

文件：585.37 Kbytes 页数：10 Pages

UNITEDSIC

UnitedSiC.

1200V-80mW SiC FET

文件：518.919 Kbytes 页数：12 Pages

UNITEDSIC

UnitedSiC.

CUIDEVICES

CUIDEVICES

上传：深圳市三芯电子有限公司

NXP
TSSOP-32

恩XP

上传：深圳庞田科技有限公司