UF3C120080K3S

Silicon Carbide (SiC) Cascode JFET - EliteSiC, 80 mohm, 1200V, TO-247-3L;

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads

UF3C120080K3S

1200 V, 80 mohm SiC FET; • On-resistance RDS(on): 80 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery\n• Low gate charge\n• Low intrinsic capacitance\n• ESD protected, HBM class 2\n;

Qorvo's UF3C120080K3S 1200 V, 80 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.\n

UF3C120080K3S

丝印：UF3C120080K3S；Package：TO-247-3L；1200V-80mW SiC FET

UJ3C120080K3S

1200V-80mWSiCFET