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UPA855TD

NPNSILICONRFTWINTRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

VJDEDUSTU855

VijeoDesigner-configurationsoftware-EducationalKit-V6.0

SCHNEIDERSchneider Electric

施耐德施耐德电气

XOPA855IDSGT

8GHzGainBandwidthProduct,Gainof7V/VStable,BipolarInputAmplifier

TI1Texas Instruments

德州仪器美国德州仪器公司

XOPA855IDSGT

8-GHzGainBandwidthProduct,Gainof7-V/VStable,BipolarInputAmplifier

TI1Texas Instruments

德州仪器美国德州仪器公司

XPGA855RGTR

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:1ppm/°C(max)atG=1V/V •Fullydifferentialoutputs –Independentoutputpower-supplypinstoallow forADCinputoverdriveprotection –Outputcommon-modecontrol •Faster

TITexas Instruments

德州仪器美国德州仪器公司

XPGA855RGTR

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fullydifferentialoutputs –Independentoutputpower-supplypins –Outputcommon-modecontrol •Fastersignalprocessing: –Widebandwidth:10MHzatallgains

TITexas Instruments

德州仪器美国德州仪器公司

ZTX855

NPNSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR

aFeatures •BVCEO>150V •IC=4AHighContinuousCollectorCurrent •ICM=10APeakPulseCurrent •TJupto200°CforHighTemperatureOperation •LowSaturationVoltage

DIODESDiodes Incorporated

美台半导体

ZTX855

NPNSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR

FEATURES *150VoltVCEO *4Ampscontinuouscurrent *Upto10Ampspeakcurrent *Verylowsaturationvoltage *Ptot=1.2Watt

Zetex

Zetex Semiconductors

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