PGA855 Low-Noise, Wide-Bandwidth, Fully Differential Output Programmable-Gain Instrumentation Amplifier

1 Features • Eight pin-programmable binary gains – G (V/V) = ⅛, ¼, ½, 1, 2, 4, 8, and 16 • Low gain error drift: 2 ppm/°C (max) • Fully differential outputs – Independent output power-supply pins – Output common-mode control • Faster signal processing: – Wide bandwidth: 10 MHz at all gains

文件：2.07758 Mbytes 页数：28 Pages

TI

德州仪器

PGA855 Low-Noise, Wide-Bandwidth, Fully Differential Output Programmable-Gain Instrumentation Amplifier

1 Features • Eight pin-programmable binary gains – G (V/V) = ⅛, ¼, ½, 1, 2, 4, 8, and 16 • Low gain error drift: 1 ppm/°C (max) at G = 1 V/V • Fully differential outputs – Independent output power-supply pins to allow for ADC input overdrive protection – Output common-mode control • Faster

文件：3.38238 Mbytes 页数：42 Pages

TI

德州仪器

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

aFeatures • BVCEO > 150V • IC = 4A High Continuous Collector Current • ICM = 10A Peak Pulse Current • TJ up to 200°C for High Temperature Operation • Low Saturation Voltage

文件：83.47 Kbytes 页数：3 Pages

DIODES

美台半导体

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

FEATURES * 150 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt

文件：71.95 Kbytes 页数：3 Pages

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