High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology

DESCRIPTION TSHF5211 is an infrared, 890 nm emitting diode in surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak

文件：147.46 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology

DESCRIPTION TSHF5211 is an infrared, 890 nm emitting diode in surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak

文件：147.99 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology

DESCRIPTION TSHF5211 is an infrared, 890 nm emitting diode in surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak

文件：147.99 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology

DESCRIPTION TSHF5211 is an infrared, 890 nm emitting diode in surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak

文件：147.99 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology

DESCRIPTION TSHF5211 is an infrared, 890 nm emitting diode in surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak

文件：147.46 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology

DESCRIPTION TSHF5211 is an infrared, 890 nm emitting diode in surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak

文件：147.46 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology

DESCRIPTION TSHF5211 is an infrared, 890 nm emitting diode in surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak

文件：147.99 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司